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SIM-PMT-BK-400

Products / Light Analysis /Photodetectors /Photomultiplier Tubes (PMT)(160-900nm) /Photomultiplier Tube (Module)(160-900nm) / SIM-PMT-BK-400 /

Cathode material type：BialKali ,Input voltage：DC5V ,Input Current：500mA ,Output signal：0~5V, Effective sensing area：Ø8mm ,Spectral sensitivity characteristics：230~700nm ,Peak quantum efficiency wavelength：400nm ,Cathode quantum efficiency：40.3%

MODEL:SIM-PMT-BK-400

4-6week Drawings

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* The prices are indicative only. Please contact us for an official quote. This is single product page, for detail specification please refer to product main page


Related Products Detailed Introduction
Compare Model Drawings & Specs Availability Reference Price
SIM-PMT-MK-420-B
Cathode material type：MultialKali, Input voltage：DC5V ,Input Current：800mA, Output signal：0~5V, Effective sensing area：8*24mm, Spectral sensitivity characteristics：165~900nm, Peak quantum efficiency wavelength：420nm, Cathode quantum efficiency：7.38% 		4-6week Request for quote
SIM-PMT-MK-400
Cathode material type：MultialKali ,Input voltage：DC5V ,Input Current：500mA ,Output signal：0~5V, Effective sensing area：Ø8mm ,Spectral sensitivity characteristics：230~870nm ,Peak quantum efficiency wavelength：400nm, Cathode quantum efficiency：23.87% 		4-6week Request for quote
SIM-PMT-GAP-520
Cathode material type：GaAsP, Input voltage：DC5V, Input Current：500mA ,Output signal：0~5V ,Effective sensing area：Ø5mm ,Spectral sensitivity characteristics：300~740nm ,Peak quantum efficiency wavelength：520nm, Cathode quantum efficiency：45% 		4-6week Request for quote

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Compare Model Drawings & Specs Availability Reference Price

Product Specifications

Parameter SIM-PMT-GAP-520 SIM-PMT-BK-400 SIM-PMT-MK-400 SIM-PMT-MK-420-B
Cathode material type GaAsP BialKali MultialKali MultialKali
Input voltage DC5V DC5V DC5V DC5V
Input Current 500mA 500mA 500mA 800mA
Output signal 0~5V 0~5V 0~5V 0~5V
Effective sensing area Ø5mm Ø8mm Ø8mm 8*24mm
Spectral sensitivity characteristics 300~740nm 230~700nm 230~870nm 165~900nm
Peak quantum efficiency wavelength 520nm 400nm 400nm 420nm
Cathode quantum efficiency 45% 40.3%(3) 23.87%(3) 7.38%(3)
Cathode radiation sensitivity 189mA/W 130mA/W 77mA/W 25mA/W
Cathode light sensitivity 390uA/lm(3) 135uA/lm 200uA/lm 60uA/lm
Anode radiation sensitivity 3.8*10^5A/W 2.6*10^5A/W 1.5*10^5A/W 3.28*10^5A/W(3)
Anode light sensitivity 556A/lm(3) 270A/lm 400A/lm 2000A/lm
Gain 2*10^6 2*10^6(3) 1.95*10^6(3) 8*10^6
Dark Current(1) 3nA 1nA 1nA 3nA
Rise time 1ns 0.57ns 0.57ns 2.2ns
Ripple noise (peak to peak) 0.6mV 0.1mV 0.1mV 4mV
Build time(2) 0.2s 10s 10s -
Operating temperature 5~35℃ 5~50℃ 5~50℃ -30~50℃
Storage temperature -20~50℃ -20~50℃ -20~50℃ -50~50℃

(1) After 30 minutes of storage in dark conditions
(2) The time required for the output to reach a stable level after the control voltage drops by 0.4V
(3) Theoretical calculation value

 

Other Parameters

Parameter Parameter Value
Input voltage AC200-240V
Input frequency 50Hz
Output Current 1 A

 

 

SIM-PMT-MK-420-B - Parameter

Type
Light Detector

SIM-PMT-MK-400 - Parameter

Type
Photon Counter

SIM-PMT-BK-400 - Parameter

Type
Photon Counter

SIM-PMT-GAP-520 - Parameter

Type
Photon Counter

SIM-PMT-MK-420-B - Download

SIM-PMT-MK-400 - Download

SIM-PMT-BK-400 - Download

SIM-PMT-GAP-520 - Download

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