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IR Emitter Chip (2-14um)| SIMTRUM Photonics Store

IR Emitter Chip (2-14um)

Infrared (IR) sources are micro-machined, electrically modulated thermal infrared emitters featuring true black body 

radiation characteristics, low power consumption, high emissivity and a long lifetime. The appropriate design is based on 

a resistive heating element deposited onto a thin dielectric membrane which is suspended on a micro-machined silicon 

structure.The sources are packaged in compact cans and are available with protective cap or with reflector. They can be 

fitted optionally with Sapphire, CaF₂, BaF₂ or Germanium broadband IR sources are ideally suited for compact IR gas 

detection modules where a high emissivity, high reliability and low power consumption are key requirements.

For Gas Measurement

CO, CO₂, VOC, NOx, NH₃, SOx, SF₆, hydrocarbons, humidity, anesthetic agents, refrigerants, breath alcohol

Technology highlights

• True black body radiation (2 to 14 μm)
• High emissivity
• Fast electrical modulation (no chopper wheel needed)
• High modulation depth
• High electrical input to optical output efficiency
• Low power consumption
• Long lifetime
• Rugged MEMS design (passed the requirements of IEC 60721-3-7 Class 7M3, except for 
BaF₂ and CaF₂ (broadband filters)


• Medical:
Capnography, anesthesia gas monitoring, respiration monitoring, pulmonary diagnostics, blood gas analysis
• Industrial:
Combustible and toxic gas detection, refrigerant monitoring, flame detection, fruit ripening monitoring, SF₆ monitoring, 

semi-conductor fabrication

• Automotive:
CO₂ automotive refrigerant monitoring, alcohol detection & interlock, cabin air quality
• Environmental:
Heating, ventilating and air conditioning (HVAC), indoor air quality and VOC monitoring, 
air quality monitoring

IRS Labkit


• Faster and easier design-in of Axetris IR Source family EMIRS200 and EMIRS50
• Very efficient tool for evaluating the ideal drive mode for achieving the best signal/noise ratio
• Quick and easy start-up and measurement within minutes
• Includes everything you need

• Simple Graphical User Interface (GUI) based on LabVIEW software
• Set and update all drive parameters live from the GUI
• Live diagram plots for data display and recording
• Visualized drive mode limitations (recommendations)
• Export of bitmap and Excel data

• Direct connection to a PC with RS232 protocol and USB
• TO socket and connector for external IR source connection
• I/O analog interface for detector synchronization and signal evaluation

Labkit Driver Board

IRS Labkit Specification 

Parameter Unit Value Conditions / Remarks
Drive Modes P / V / I CW / Wave signal-
Power control P mW 50 – 800 Power regulated
Voltage control V 0.5 – 10 Voltage regulated
Current control I mA 5 – 100 Current regulated
Waveform signal CW / SQ Wave Signal
Frequency Hz 0 (CW), 4 – 50-
Duty cycle 5 – 90-
Analog I/O 0 – 5 Synchronization of detector circuit, detector signal recording

Broadband filters Option  & Optical Emission Vs. Angle 

• Complements detector filter
• Eliminates background signal and improves S/N ratio
• Protects the IR source in harsh environments
• Prevents parasitic influence of the sample gas (for tightly sealed broadband filter installation)

Angular radiation distribution with standard cap and reflectors.Transmission curves for the different filter types.

Custom Reflector

• Optimization of the emission distribution with Zemax

Reflectors collimate IR radiation on axis. (red: high emission density per area;

blue: low emission density per area).

True black body radiation (wavelength from 2 μm to 14 μm)

High emissivity

• A unique thin film process creates a pure black body structure with emissivity close to 1.

Black dendritic surface structure
Spectral emissivity graph

Fast electrical modulation and high modulation depth MEMS technology 

 offers the possibility to achieve thin and low-mass membrane with short time constant, enabling IR-source to be modulated at high frequency with high modulation depth.

Front and backside of the IR Source MEMS chip EMIRS200 (left), EMIRS50 chip (right).

Driven with a constant voltage square-wave drive and measured with a high speed

broadband detector.

High electrical input power to optical output efficiency

• Due to the black surface, the IR source has excellent electrical to optical conversion efficiency. The black body surface guarantees maximized emissivity while the thin membrane is responsible for optimized heat flux.

Efficiency optimization by heat flux simulation.

Reliability of the MEMS structure
• The semiconductor MEMS manufacturing technology guarantees high reliability and quality of the IR sources. In addition to the strict quality control system during wafer-level manufacturing, every single IR source is subjected to a final burn-in and test.

• The Mean Time To Failure (MTTF) for membrane breakage of the IR source is based on a statistical analysis of lifetime data collected from several years of reliability testing. Reliability of the membrane breakage depends greatly on the type of packaging, the electrical input power and the operating mode.

Lifetime reliability plot for IR Sources in modulated mode with 10Hz (EMIRS200), 

30Hz (EMIRS50) with a typ. duty cycle of 62% (dashed line) and CW mode (solid line).

Processed wafer of IRS MEMS-based chips before dicing.

Main Measurement Principles:

Non-Dispersive InfraRed (NDIR) principle
Non-Dispersive InfraRed spectroscopy utilizes a broadband infrared source covering the entire wavelength spectrum needed to measure a large variety of gases.  The specific wavelengths desired to measure the gas(es) of interest are selected with narrow band pass filters. The radiation is absorbed by the gas resulting in a signal decrease which is proportional to the gas concentration inside the sample volume. Thermopiles or pyroelectric detectors are commonly used for this spectroscopy technique

Photo-Acoustic Spectroscopy (PAS) principle

When infrared radiation is absorbed, the absorbing gas is heated. This heating causes a thermal expansion which, in turn, is responsible for a pressure increase in the sample volume. When the radiation is switched off, the gas cools down and the pressure decreases accordingly. With a pulsed IR source, a pressure wave e.g. soundwave is created which can be detected with a microphone. The higher the concentration of the gas of interest (appropriate wavelength has to be chosen with filters), the higher the signal. PAS is not limited to gases but can also be applied to liquids and solids.

Attenuated Total Reflectance (ATR) principle
When radiation is totally reflected from an interface a small part of it will be transmitted into the adjacent medium. This evanescent wave experiences an exponential decay with penetration depths in the order of the wavelength. The amount of light that is coupled into this evanescent wave depends on the difference of refractive indices of the two adjacent media. In ATR spectroscopy, a crystal made of a high refractive index material serves as the light guiding medium. The sample, usually a liquid, is brought into contact so that the evanescent wave can interact with it. The appropriate wavelength is chosen with a narrow band pass filter. Depending on the state or quality of the sample, more or less light is coupled out and the signal on the detector then changes accordingly. Line arrays of thermopiles or pyroelectric detectors are frequently applied in these setups.

Product Portfolio & Brochures

 English: IR LED Chip

产品册中文: IR LED Chip



Type  *WD (top of refl.)/Power in < 20° angle Broadband filter Cap / Reflector Measurement principles Product photo
TO-39 Chip on Header No collimation / 12%  No  No  NDIR, PAS
TO-39 Standard TO-Cap No collimation / 12%  No  CAP 0-53/40-0  NDIR, PAS 
TO-39 Low Profile TO-Cap No collimation / 12.3%  No  CAP 0-45/28-0  NDIR, PAS 
TO-39 Standard Reflector 1 5 – 15 mm / 60%  Yes  REF W-55/40-0  NDIR, ATR 
TO-39 Standard Reflector 2 0 – 7 mm / 54%  No  REF W-40/43-0  NDIR, ATR 
TO-39 Standard Reflector 3 10 – 30 mm / 82%  Yes  REF W-90/151-0  NDIR, ATR 
TO-39 Standard Reflector 4 No collimation / 15.7%  Yes  CAP W-36/12-0  NDIR, PAS
TO-46 Chip on Header No collimation / 12%  No  No  NDIR, PAS 
TO-46 Standard TO-Cap No collimation / 12%  No  CAP 0-30/25-N-0  NDIR, PAS 
TO-46 Standard Reflector 5 No collimation / 17%  Yes  CAP W14/13-0-0  NDIR, PAS
TO-46 Standard Reflector 6 10 – 30 mm / 81%  No  REF W57-50-M-00 NDIR, PAS 
TO-46 Standard Reflector 7 5 – 20 mm / 90%  No  REF W30-41-M-00 NDIR
Customized Products  Custom  Custom  Custom  NDIR, PAS, ATR 


Electrical/Optical Characteristics

Parameters Unit Value (Min) Value (Typical) Value (Max) Conditions/Remarks
Electrical cold resistance RC22 Ω 35 - 55 -
Electrical hot resistance RH500C Ω 54 - 89 -
Heater power PH mW 350 450 550 On-Time state
Heater voltage VH V 4.9 5.6 6.3 On-Time state
Heater membrane temperature TM °C 330 450 500 -
Turn on time τon ms - 18 - -
Turn off time τoff ms - 8 - -
Frequency Hz 5 - 50 -
Lifetime years - 10 - At temperature <500°C
Emissivity ε - - > 0.85 - Mean from 2 to 14 μm
Heater area AH mm² - 2.1 x 1.8 - -
Housing/TO-header temperature TTOH 40 - 85 at TA = 22°C
Electrical cold resistance RC22 Ω 22 - 36 -
Electrical hot resistance RH500C Ω 32 - 53 -
Heater power PH mW 170 187 210 On-Time state
Heater voltage VH V 2.5 2.7 3 On-Time state
Heater membrane temperature TM °C 330 463 500 -
Turn on time τon ms - 10 - -
Turn off time τoff ms - 5 - -
Frequency Hz 10 - 100 -
Lifetime years - 10 - At temperature <500°C
Emissivity ε - - > 0.85 - Mean from 2 to 14 μm
Heater area AH mm² - 0.8 x 0.8 - -
Housing/TO-header temperature TTOH 40 - 85 at TA = 22°C



















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